DOI: 10.1039/d3mh00645j Corpus ID: 259171106; Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing. @article{Li2023FlexibleAH, title={Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing.}, author={Zhenhai Li and Tianyu Wang …

The recent discovery 1 of ferroelectricity in doped thin films of silicon-compatible hafnium oxide (HfO 2, or hafnia) has led to keen attention from both basic …

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO 2 and its implementation …

For the film doped with 2.3 mol. % Mg, the remanent polarization is 16.4 μC/cm 2 after the wake-up process, and 76.1% of the initial 2P r value can be maintained after 10 7 cycles of bipolar field cycling. All the results show that Mg is a promising dopant to stabilize the ferroelectricity of hafnium oxide films.

The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other …

Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field-effect transistor in the state-of-the-art 28 nm technology. Though many studies are conducted with a ...

Hafnium oxide nanoparticles doped with trivalent samarium (HfO 2:Sm 3+) were synthesized by hydrothermal route using 140 mL of hafnium chloride aqueous solutions (0.04 M) with different amounts of samarium chloride (0, 0.5, 1, 3, 5 and 10 at% with respect to hafnium). A 2 M potassium hydroxide solution was used as a stabilizing …

Abstract: Study on the effect of nanosecond laser anneal (NLA) induced crystallization of ferroelectric (FE) Si-doped hafnium oxide (HSO) material is reported. The laser energy density (0.3 J/cm 2 to 1.3 J/cm 2) and pulse count (1.0 to 30) variations are explored as pathways for the HSO based metal-ferroelectric-metal (MFM) capacitors.The increase in …

Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, Si:HfO2 layers based on thermal atomic …

The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator–metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 °C and silicon contents from 0 to 8.5 %.For the 9 nm thick films, an improvement of the ferroelectric remanent polarization …

We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO 2) by temperature dependent polarization and x-ray diffraction measurements.If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior.

This paper describes a unique synthesized nanosphere using 6% Cobalt doped hafnium oxide/reduced graphene oxide nanocomposite (6% Co doped HfO 2 /rGO) for its feasibility as electrode material in supercapacitor applications utilizing a simple one-step hydrothermal technique. The structural behavior, binding energies, and quality of …

Nature - Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer …

Hafnium oxide (HfO 2) is an important high-κ dielectric in the microelectronics industry as it is an alternative to SiO 2.To minimize the total oxide thickness, attempts were made to grow HfO 2 directly on oxide-free Si surfaces. Although deposition was ultimately possible, it was shown that there is an incubation period for HfO 2 growth, 75 related to the relatively high …

The discovery of ferroelectricity in hafnium oxide [], which is a gate material in the high-k metal gate complementary metal oxide semiconductor (CMOS) process technology, enabled the development of highly scaled ferroelectric field-effect transistors (FeFETs) for non-volatile memory application, e.g. in the 28 nm [], 22 nm [], or even …

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in "pinched" polarization hysteresis loops, …

In this work, high quality hafnium and hydrogen co-doped In 2 O 3 (IHfO:H) transparent conductive films are developed via a reactive plasma deposition (RPD) technique followed by air atmosphere annealing. Crystallinity, valence states, and opto-electronic properties of the IHfO:H films under different H 2 concentration (0–1.5 %) and …

The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to its high-speed and low-power characteristics. In this work, aluminum-doped HfO2 (HfAlO) ferroelectric thin films are deposited on a muscovite substrate (Mica). We investigate the bending effect on the ferroelectric chara

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found.

In this paper, we report our work on the preparation and characterization of BaTi 1−x Hf x O 3 (0 < x < 0.15) ceramics. The chemical property of hafnium (Hf) is very much similar to that of zirconium (Zr) but its atomic weight of Hf (178.5 g/mol) is much larger than that of Zr (91.2 g/mol). As a result, the partial substitution of Ti in BaTiO ...

A study was conducted on how the subsequent cooling time affects the ferroelectric (FE) characteristics of atomic layer deposited (ALD) lanthanum (La) doped HfO 2 thin films after the crystallization heat treatment in the form of TiN/La-doped HfO 2 /TiN metal-ferroelectric-metal (MFM) device structure. The ALD La-doped HfO 2 thin film was …

Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO 2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. . …

Hafnium oxide (pure, doped, or oxygen-deficient material) attracts additional interest as a promising candidate for use in non-volatile resistive random access memory (ReRAM) [10], [11], [12] and ferroelectric random access memory devices (FeRAM) [13], [14], [15]. Also, hafnium oxide is widely used for preparation of optical and protective ...

A gallium-doped hafnium oxide-based ferroelectric film capacitor is characterized by being of a multilayer structure and comprising a substrate, a bottom electrode, a functional material and a top electrode from bottom to top, wherein the functional material is a gallium-doped hafnium oxide HfGaO ferroelectric film layer, and …

In recent years, HfO 2 thin films doped with elements such as Y, Al, Zr, Sr, etc., showing good ferroelectric properties, have been reported. At the same time, scholars have carried out a lot of exploratory …

In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm 3 is achieved at 4.5 MV/cm with a high efficiency of ∼65%.

Description. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO 2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of ...

Ferroelectricity in calcium doped hafnium oxide (Ca:HfO 2) thin films has been experimentally proved for the first time in this work.All films prepared by chemical solution deposition exhibited smooth and crack-free surfaces, which were observed using an atomic force microscope.

Coatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO2 doped with Al2O3 were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD). The mainly amorphous 60–80 nm thick films consisted Al in the range of 2 to 26 at.%. The …

In the past, hafnium dioxide has typically been used as a high-k dielectric in state-of-the-art complementary metal–oxide–semiconductor devices [1,2].However, since the discovery that hafnium oxide doped with silicon has ferroelectric properties [], it has attracted great attention because of its chemical simplicity, good compatibility with …